Resistor element, method of manufacturing the same, and resistor element assembly

ABSTRACT

A resistor element includes a first terminal and a second terminal disposed on opposite end portions of a base substrate, respectively. A first resistance layer is connected to the first terminal and formed of a thick film resistor, and a second resistance layer is connected to the first resistance layer and the second terminal and is formed of a thin film resistor.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application is a continuation of U.S. patent application Ser. No.15/728,977, filed Oct. 10, 2017 which claims the benefit under 35 U.S.C.§ 119 (a) of priority to Korean Patent Application No. 10-2017-0019591filed on Feb. 13, 2017 in the Korean Intellectual Property Office, theentire disclosures of both are incorporated herein by reference for allpurposes.

BACKGROUND 1. Field

The following description relates to a resistor element, a method ofmanufacturing the same, and a resistor element assembly.

2. Description of Related Art

In response to demand for miniaturized and light weight electronicdevices, chip-type resistor elements have been used to increase wiringdensity of the circuit board. In addition, as power requirements forelectronic devices have increased, circuits for detecting an overcurrentand a state of charge (SoC) of a battery have been introduced toelectronic devices, such that a resistor element having a high degree ofprecision is required.

A thick film resistor element is manufactured by a relatively simpleprocess, but has a difficulty implementing precision at a predeterminedlevel or more due to characteristics of the resistive materialconstituting the film resistor and due to the manufacturing process. Thespecific resistance and temperature coefficient of resistivity (TCR) ofthe resistive material are high and thermoelectromotive force generatedin a trimming process can cause an error in the resistance value.

A thin film resistor element using a thin film resistor has beendeveloped in order to manufacture a resistor element having highprecision, but has difficultly implementing a high resistance value (forexample, 100 KΩ or more) due to limitations in the manufacturingprocess, such that it may be difficult to secure diversity in products.

SUMMARY

An aspect of the present disclosure may provide a resistor elementhaving a high resistance value and improved precision.

According to an aspect of the present disclosure, a resistor element mayinclude a first terminal and a second terminal on opposite end portionsof a base substrate, respectively. A first resistance layer may beelectrically connected to the first terminal and comprise a thick filmresistor. A second resistance layer may be electrically connected to thefirst resistance layer and the second terminal and comprise a thin filmresistor.

Another aspect of the present disclosure is a method of manufacturing aresistor element. The method may include preparing a base substrate. Afirst internal electrode and a second internal electrode may be formedon opposite end portions of the base substrate, respectively. A firstresistance layer may be formed to be connected to the first internalelectrode and formed of a thick film resistor. A second resistance layermay be formed to be connected to the first resistance layer and thesecond internal electrode and formed of a thin film resistor. A firstexternal electrode and a second external electrode may be formed on thefirst internal electrode and the second internal electrode,respectively.

According to another aspect of the present disclosure, a resistorelement assembly may include a printed circuit board having first andsecond electrode pads thereon and a resistor element on the printedcircuit board. The resistor element may include a first and secondterminals on opposite end portions of a base substrate, respectively. Afirst resistance layer may be electrically connected to the firstterminal and comprise a thick film resistor. A second resistance layermay be electrically connected to the first resistance layer and thesecond terminal and comprise a thin film resistor.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the presentdisclosure will be more clearly understood from the following detaileddescription taken in conjunction with the accompanying drawings, inwhich:

FIG. 1 is a perspective view illustrating a resistor element accordingto an exemplary embodiment in the present disclosure;

FIG. 2 is a cross-sectional view taken along line I-I′ of FIG. 1;

FIG. 3 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure;

FIG. 4 is a cross-sectional view taken along line II-II′ of FIG. 3;

FIG. 5 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure;

FIG. 6 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure;

FIG. 7 is a flow chart illustrating a method of manufacturing a resistorelement according to an exemplary embodiment in the present disclosure;

FIG. 8 is a perspective view illustrating a resistor element assemblyaccording to an exemplary embodiment in the present disclosure; and

FIG. 9 is a cross-sectional view taken along line III-III′ of FIG. 8.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments of the present disclosure will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 is a perspective view illustrating a resistor element accordingto an example embodiment in the present disclosure. FIG. 2 is across-sectional view taken along line I-I′ of FIG. 1. Referring to FIGS.1 and 2, a resistor element 100 may include a base substrate 110, afirst terminal 121, a second terminal 122, a first resistance layer 130,and a second resistance layer 140. FIGS. 1 and 2 illustrate an exemplaryembodiment in which the first resistance layer 130 and the secondresistance layer 140 are disposed on one surface of the base substrate100.

The base substrate 110 may support the first resistance layer 130 andthe second resistance layer 140, and secure strength of the resistorelement 100. The base substrate 110 may have a predetermined thicknessand may have a thin plate shape that has first and second surfacesopposing each other and each having a rectangular thin plate shape, butis not limited thereto. The base substrate 110 may be formed of amaterial having excellent thermal conductivity, and may effectivelydissipate externally heat generated from the first resistance layer 130and the second resistance layer 140 when a current and a voltage areapplied to the resistor element.

The base substrate 110 may be formed of a ceramic material such asalumina (Al₂O₃) or a polymer. In particular, the base substrate 110 maybe an alumina substrate obtained by anodizing a surface of thinplate-shaped aluminum.

As illustrated in FIG. 1, the first terminal 121 and the second terminal122 may be disposed on opposite end portions of the base substrate 110,respectively. The first terminal 121 and the second terminal 122 may beformed to surround opposite end portions of the base substrate 110,respectively. Since the first terminal 121 and the second terminal 122are connected to opposing end portions of the first resistance layer 130and the second resistance layer 140 bonded to each other, respectively,the first terminal 121 and the second terminal 122 may be electricallyconnected to each other by a path of a series structure formed by thefirst resistance layer 130 and the second resistance layer 140. Thefirst terminal 121 and the second terminal 122 will be described in moredetail with reference to FIG. 2.

The first resistance layer 130 and the second resistance layer 140 maybe disposed on one surface of the base substrate 110. The firstresistance layer 130 and the second resistance layer 140 may be disposedbetween the first terminal 121 and the second terminal 122, which arespaced apart from each other, and may be connected to the first terminal121 and the second terminal 122, respectively, to be thus used asresistance elements. The first resistance 130 may be connected to thefirst terminal 121, and the second resistance layer 140 may be disposedbetween the first resistance layer 130 and the second terminal 122 andbe connected to the first resistance layer 130 and the second terminal122. The first resistance layer 130 and the second resistance layer 140may be bonded to each other.

In the exemplary embodiment in the present disclosure, the firstresistance layer 130 may be a thick film resistor, and the secondresistance layer 140 may be a thin film resistor. For example, the firstresistance layer 130 being a thick film resistor may contain rutheniumoxide (RuO₂) as a conductive particle and may be bonded to the basesubstrate through a process of printing and then firing a paste furtherincluding glass.

The second resistance layer 140 being a thin film resistor may containat least one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN)alloy, and a tantalum nitride (TaN) alloy, and may be bonded to the basesubstrate through a sputtering process.

The resistance value of the resistor element 100 may be determined by atrimming process for the first resistance layer 130 and the secondresistance layer 140. The trimming process refers to a process ofpartially removing a resistance layer through fine cutting, or the like,of the resistance layer using a laser beam in order to obtain aresistance value required for the design of the circuit after theresistance layer is formed.

In the trimming process, a groove is formed while measuring theresistance value of the resistor element. When the measured resistancevalue arrives at a target resistance value, the process of forming thegroove is stopped, such that the resistance value of the resistorelement is adjusted. FIGS. 1 and 2 illustrate grooves T formed in thesecond resistance layer 140 by a trimming process. Although notillustrated, grooves may be formed in the first resistance layer 130having the same function as that of the grooves T formed in the secondresistance layer 140. When the trimming process is performed for thegrooves in the first resistance layer 130, the resistance value of theresistor element may be adjusted by performing the trimming process forthe second resistance layer 140 after the trimming process for the firstresistance layer 130.

Since the resistive material constituting the thin film resistor of thesecond resistance layer 140 has a low specific resistance value, theresistive material constituting the thin film resistor may beadvantageous for manufacturing a resistor element having a minuteresistance value. In addition, since the resistive material constitutingthe thin film resistor has a low temperature coefficient of resistivity(TCR), the resistive material constituting the thin film resistor mayallow the thin film resistor to have a more precise resistance value inthe trimming process and allow the resistor element to have robustnessagainst temperature.

As described above, since the resistor element according to theexemplary embodiment in the present disclosure includes a thick filmresistor that can have a high resistance value, the resistor element maybe manufactured to have resistance values in various ranges. Inaddition, since the resistor element according to the exemplaryembodiment in the present disclosure includes a thin film resistor thathas a precise resistance value and a low TCR, the resistor element canhave high precision and reliability.

A protective layer 150 may be disposed on surfaces of the firstresistance layer 130 and the second resistance layer 140. The protectivelayer 150 may be disposed between the first terminal 121 and the secondterminal 122, may prevent the first resistance layer 130 and the secondresistance layer 140 from being externally exposed, and may protect thefirst resistance layer 130 and the second resistance layer 140 fromexternal impacts. For example, the protective layer 150 may includesilicon (SiO₂), glass, or polymer.

Referring to FIG. 2, the protective layer 150 may include a firstprotective layer 151 formed of glass and a second protective layer 152formed of polymer. The first protective layer 151 may be formed beforethe trimming process to prevent the generation of cracks in the firstand second resistance layers 130 and 140 during the trimming process.The second protective layer 152 may be formed after the trimming processto protect the first resistance layer 130 and the second resistancelayer 140.

Even though the protective layer 150 is disposed on the secondresistance layer 140, the first and second terminals 121 and 122 mayprotrude further as compared to the protective layer 150, such that thefirst and second terminals 121 and 122 and electrode pads disposed on acircuit board may be easily in contact with each other when mounting theresistor element on the circuit board.

An example of the first terminal 121 and the second terminal 122 willhereinafter be described in more detail with reference to FIG. 2.

For example, the first terminal 121 may include a first internalelectrode 121 a and a first external electrode 121 b. Likewise, thesecond terminal 122 may include a second internal electrode 122 a and asecond external electrode 122 b.

The first internal electrode 121 a and the second internal electrode 122a may be disposed on opposite end portions of the base substrate 110,respectively. The first external electrode 121 b and the second externalelectrode 122 b may be disposed on the first internal electrode 121 aand the second internal electrode 122 a, respectively. That is, thefirst external electrode 121 b may cover at least portions of a surfaceof the first internal electrode 121 a, and the second external electrode122 b may cover at least portions of a surface of the second internalelectrode 122 a.

The first internal electrode 121 a may include a first seed electrode121 a 1 and a first backside electrode 121 a 2. Likewise, the secondinternal electrode 122 a may include a second seed electrode 122 a 1 anda second backside electrode 122 a 2.

The first seed electrode 121 a 1 and the second seed electrode 122 a 1may be disposed on the first, lower surface of the base substrate 110.The first backside electrode 121 a 2 and the second backside electrode122 a 2 may be disposed on a second, upper surface of the base substrate110 opposing the first surface of the base substrate 110. The first seedelectrode 121 a 1 may face the first backside electrode 121 a 2, and thesecond seed electrode 122 a 1 may face the second backside electrode 122a 2.

As illustrated in FIG. 2, the first backside electrode 121 a 2 may beconnected to the first resistance layer 130, and the second backsideelectrode 122 a 2 may be connected to the second resistance layer 140.

The first internal electrode 121 a may further include a first sideelectrode 121 a 3, and the second internal electrode 122 a may furtherinclude a second side electrode 122 a 3. The first side electrode 121 a3 and the second side electrode 122 a 3 may be disposed, respectively,on opposite end surfaces of a laminate formed by stacking the basesubstrate 110, the first resistance layer 130, the second resistancelayer 140, the first and second seed electrodes 121 a 1 and 122 a 1, andthe first and second backside electrodes 121 a 2 and 122 a 2.

The first side electrode 121 a 3 may be disposed to be connected to thefirst seed electrode 121 a 1 and the first backside electrode 121 a 2,and the second side electrode 122 a 3 may be disposed to be connected tothe second seed electrode 122 a 1 and the second backside electrode 122a 2. When the first internal electrode 121 a includes the first sideelectrode 121 a 3 and the second internal electrode 122 a includes thesecond side electrode 122 a 3, the first and second external electrodes121 b and 122 b may also be formed on the first and second sideelectrodes 121 a 3 and 122 a 3, respectively.

FIG. 3 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure. FIG. 4 is across-sectional view taken along line II-II′ of FIG. 3.

A resistor element 200 illustrated in FIGS. 3 and 4 may be understood tobe similar to the resistor element 100 illustrated in FIGS. 1 and 2,except that a first resistance layer 130′ is disposed on the first,lower surface of the base substrate 110, and the resistor element 200includes a conductive via H. The components of the resistor element 200according to the present exemplary embodiment may be understood withreference to the description for the same or similar components of theresistor element 100 illustrated in FIGS. 1 and 2, unless explicitlydescribed to the contrary, and overlapping descriptions are omitted.

Referring to FIGS. 3 and 4, the first resistance layer 130′ of theresistor element 200 may be disposed on the first surface of the basesubstrate 110, and the second resistance layer 140 may be disposed onthe second surface of the base substrate 110 opposing the first surface.The first resistance layer 130′ may be connected to the first terminal121 on the first surface, and the second resistance layer 140 may beconnected to the second terminal 122 on the second surface. Asillustrated in FIG. 4, a first seed electrode 121 a 1′ included in thefirst terminal 121 may be connected to the first resistance layer 130′.The first resistance layer 130′ and the second resistance layer 140 maybe connected to each other by the conductive via H penetrating throughthe base substrate.

A first protective layer 160 may be disposed on a surface of the firstresistance layer 130′, and a second protective layer 150 may be disposedon a surface of the second resistance layer 140.

FIGS. 3 and 4 illustrate the resistor element 200 with the conductivevia H having a through-hole form penetrating through the base substrate110, but the resistor element may include a groove provided in a sidesurface of the base substrate 110 instead of the conductive via H. Suchan exemplary embodiment is illustrated in FIG. 5.

FIG. 5 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure. The resistorelement 200′ illustrated in FIG. 5 may be similar to the resistorelement 200 illustrated in FIGS. 3 and 4, except that a groove G in aside surface of the base substrate is formed instead of the conductivevia H (see FIG. 3). The components of the resistor element 200′according to the present exemplary embodiment may be understood withreference to the description for the same or similar components of theresistor element 100 illustrated in FIGS. 1 and 2 and the resistorelement 200 illustrated in FIGS. 3 and 4, unless explicitly described tothe contrary, and overlapping descriptions are omitted.

Referring to FIG. 5, a first resistance layer 130′ of the resistorelement 200′ may be disposed on a first surface of the base substrate110, and a second resistance layer 140 may be disposed on a secondsurface of the base substrate 110 opposing the first surface.

As compared to the resistor element 200 illustrated in FIG. 3, theresistor element 200′ may include a groove G provided in the sidesurface of the base substrate 110, instead of the conductive via H. Thefirst resistance layer 130′ and the second resistance layer 140 may beconnected to each other by the groove G. The side surface of the basesubstrate in which the groove G is formed may be positionedperpendicular to a direction in which the first terminal 121 and thesecond terminal 122 are arranged. The groove G according to the presentexemplary embodiment may have a semicircular shape when viewed in across section in a horizontal direction, but is not limited thereto.

FIG. 6 is a perspective view illustrating a resistor element accordingto another exemplary embodiment in the present disclosure. The resistorelement 200″ illustrated in FIG. 6 may be similar to the resistorelement 200 illustrated in FIGS. 3 and 4, except that it furtherincludes a conductive via H1 connecting a first terminal 121 and a firstresistance layer 130″. The components of the resistor element 200″according to the present exemplary embodiment may be understood withreference to the description of the same or similar components of theresistor element 100 illustrated in FIGS. 1 and 2 and the resistorelement 200 illustrated in FIGS. 3 and 4, unless explicitly described tothe contrary, and overlapping descriptions are omitted.

Referring to FIG. 6, the first resistance layer 130″ of the resistorelement 200″ may be disposed on a first surface of a base substrate 110,and a second resistance layer 140 may be disposed on a second surface ofthe base substrate 110 opposing the first surface. As compared to theresistor element 200 illustrated in FIG. 3, the first resistance layer130″ may be disposed such that it is not connected to the first terminal121 on the first surface. The resistor element 200″ may further includethe first conductive via H1 penetrating through the base substrate 110,with the first resistance layer 130″ connected to the first terminal 121through the first conductive via H1.

The first resistance layer 130″ and the second resistance layer 140 maybe connected to each other by a second conductive via H2 penetratingthrough the base substrate.

As described above with reference to FIGS. 3 through 6, the firstresistance layer 130′ and the second resistance layer 140 may bedisposed on different surfaces. As such, that the first resistance layer130′ and the second resistance layer 140 may be formed by separateprocesses, and interference between the first resistance layer 130′ andthe second resistance layer 140, which could be generated when a currentand a voltage is applied to the resistor element, may be significantlyreduced. In addition, interference of the first resistance layer 130′with the second resistance layer 140 that may be generated when groovesT are formed in the second resistance layer 140 by a trimming processmay be significantly reduced.

FIG. 7 is a flow chart illustrating a method of manufacturing a resistorelement according to an exemplary embodiment in the present disclosure.

The method of manufacturing a resistor element according to the exampleembodiment in the present disclosure may include preparing a basesubstrate (S1), forming a first internal electrode and a second internalelectrode on opposite end portions of the base substrate, respectively(S2), forming a first resistance layer connected to the first internalelectrode and formed of a thick film resistor (S3), forming a secondresistance layer connected to the first resistance layer and the secondinternal electrode and formed of a thin film resistor (S4), and forminga first external electrode and a second external electrode on the firstinternal electrode and the second internal electrode, respectively (S5).The sequence of S2 to S4 is provided by way of example, and may be adifferent sequence. The method of manufacturing a resistor element mayfurther include measuring resistance between the first internalelectrode and the second internal electrode and trimming the secondresistance layer.

The method of manufacturing a resistor element according to the exampleembodiment in the present disclosure will hereinafter be described withreference to FIGS. 1, 2, and 7. A description for the same or similarcontents as the features of the resistor elements according to theexemplary embodiments in the present disclosure described above isomitted.

First, the base substrate 110 on which the resistance layers and theelectrodes are disposed may be prepared (S1). The base substrate 110 maybe prepared at a size at which a plurality of resistor elements may beformed, and may be diced in the form of individual resistor elementsbefore the forming (S5) of the first external electrode and the secondexternal electrode.

The first internal electrode 121 a and the second internal electrode 122a may be formed in step S2. The first internal electrode 121 a and thesecond internal electrode 122 a may be formed by a process of printing aconductive paste or a process of sputtering the conductive paste. Thefirst internal electrode 121 a and the second internal electrode 122 amay serve as seeds in a plating process for the first external electrode121 b and the second external electrode 122 b. The internal electrodesmay include, for example, at least one of silver (Ag), copper (Cu),nickel (Ni), and platinum (Pt).

The first resistance layer 130 formed of the thick film resistor may beformed in step S3. The thick film resistor may be bonded to the basesubstrate through a process of printing and then firing a pastecontaining a ruthenium oxide, for example.

The second resistance layer 140 formed of the thin film resistor may beformed in step S4. The thin film resistor may contain, for example, atleast one of a nickel chromium (NiCr) alloy, a titanium nitride (TiN)alloy, and a tantalum nitride (TaN) alloy, and may be bonded to the basesubstrate through a sputtering process.

The first resistance layer 130 and the second resistance layer 140 maybe formed on one surface of the base substrate. The first resistancelayer 130 and the second resistance layer 140 may be bonded andconnected to each other, or may be connected to each other by aconnection electrode disposed therebetween.

The first external electrode 121 b and the second external electrode 122b may be formed on the first internal electrode 121 a and the secondinternal electrode 122 a, respectively, in step S5. The first externalelectrode 121 b and the second external electrode 122 b may be formed onthe first internal electrode 121 a and the second internal electrode 122a, respectively, by a plating process. The first external electrode 121b and the second external electrode 122 b may be formed after theprotective layer 150 is formed.

The first external electrode 121 b and the second external electrode 122b may include, for example, at least one of nickel (Ni), tin (Sn),copper (Cu), and chromium (Cr). Each of the first external electrode 121b and the second external electrode 122 b may include, for example, adouble layer of a nickel (Ni) plating layer and a tin (Sn) platinglayer, and may further include a copper (Cu) plating layer. The nickel(Ni) plating layer may prevent a component (for example, Ag) of theinternal electrode from leaching into a solder component at the time ofmounting the resistor element, and the tin (Sn) plating layer may beprovided to be easily bonded to the solder component at the time ofmounting the resistor element. The copper (Cu) plating layer may improveconductivity of the internal electrode.

A trimming process of measuring resistance values of the firstresistance layer 130 and the second resistance layer 140 disposedbetween the first internal electrode and the second internal electrodeand adjusting the resistance values may be performed before the formingstep S5. The grooves T may be formed in the first resistance layer 130and the second resistance layer 140 in the trimming process.

FIG. 8 is a perspective view illustrating a resistor element assemblyaccording to an exemplary embodiment in the present disclosure. FIG. 9is a cross-sectional view taken along line of FIG. 8.

Referring to FIGS. 8 and 9, the resistor element assembly may include acircuit board 11 on which the resistor element illustrated in FIGS. 1and 2 is mounted. However, the resistor element assembly is not limitedthereto, and may also include circuit boards on which the resistorelements illustrated in FIGS. 3 through 6 are mounted.

The circuit board 11 may include first and second electrode pads 12 and13 disposed in a mounted region of the resistor element. The first andsecond electrode pads 12 and 13 refer to land patterns connected tocircuit patterns implemented on the circuit board 11 and provided inorder to mount the resistor element.

The resistor element may include a base substrate 110, a first terminal121 and a second terminal 122, respectively disposed on opposite endportions of the base substrate 110, a first resistance layer 130connected to the first terminal 121 and formed of a thick film resistor,and a second resistance layer 140 connected to the first resistancelayer 130 and the second terminal 122 and formed of a thin filmresistor. The resistor element may further include a protective layer150.

As described above, since the second resistance layer 140 of theresistor element has a low specific resistance and a low temperaturecoefficient of resistivity (TCR), the resistor element may haverobustness against temperature and may have a more precise resistancevalue. In addition, since the resistor element further includes thefirst resistance layer 130, the resistor element may be manufactured tohave resistance values (for example, 100 KΩ or more) in various rangesthat are difficult to implement by only the second resistance layer 140.

The circuit board 11 may have an electronic circuit formed thereon, andan integrated circuit (IC) for a specific operation or control of anelectronic device, or the like, may be formed on the circuit board 11,such that a current supplied from a separate power supply may flow tothe circuit board 11.

The circuit board 11 may include various wiring lines or further includeother kinds of semiconductor elements such as a transistor, and thelike. The circuit board 11 may be variously configured, as necessary.For example, the circuit board 11 may include a conductive layer orinclude a dielectric layer.

The first and second electrode pads 12 and 13 may be disposed on thecircuit board 11 to be spaced from each other, and may be connected,respectively, to the first and second terminals 121 and 122 of theresistor element 100 by solders 15.

FIGS. 8 and 9 illustrate the first electrode pad 12 connected to thefirst terminal 121 and the second electrode pad 13 connected to thesecond terminal 122, but the first electrode pad 12 may be connected tothe second terminal 122 and the second electrode pad 13 may be connectedto the first terminal 121, depending on the design.

As set forth above, the resistor element and the resistor elementassembly according to the exemplary embodiment in the present disclosuremay include the thick film resistor that may have a high resistancevalue and the thin film resistor that has a low temperature coefficientof resistivity (TCR) and a low specific resistance value to thus providea high resistance value while maintaining precision.

In addition, according to the exemplary embodiment in the presentdisclosure, the method of manufacturing the resistor element describedabove may be provided.

While example embodiments have been shown and described above, it willbe apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinvention as defined by the appended claims.

What is claimed is:
 1. A resistor element comprising: a first terminaland a second terminal on opposite end portions of a base substrate,respectively; a first resistance layer electrically connected to thefirst terminal, comprising a thick film resistor; and a secondresistance layer electrically connected to the first resistance layerand to the second terminal, comprising a thin film resistor.
 2. Theresistor element of claim 1, wherein the first resistance layer and thesecond resistance layer are bonded to each other on one surface of thebase substrate.
 3. The resistor element of claim 1, wherein the firstresistance layer is on a first surface of the base substrate, and thesecond resistance layer is on a second surface of the base substrateopposing the first surface.
 4. The resistor element of claim 3, whereinthe first resistance layer and the second resistance layer areelectrically connected to each other by a conductive via penetratingthrough the base substrate.
 5. The resistor element of claim 1, whereinat least one of the first terminal and the second terminal iselectrically connected to at least one of the first resistance layer andthe second resistance layer by a conductive via.
 6. The resistor elementof claim 1, wherein the thick film resistor contains a ruthenium (Ru)oxide, and the thin film resistor contains at least one of a nickelchromium (NiCr) alloy, a titanium nitride (TiN) alloy, and a tantalumnitride (TaN) alloy.
 7. The resistor element of claim 1, wherein thesecond resistance layer is trimmed, whereby a resistance value of theresistor element is established by carrying out a trimming process ofthe second resistance layer.
 8. The resistor element of claim 1, whereinthe first resistance layer is a printed and fired layer, and the secondresistance layer is a sputtered layer.
 9. A method of manufacturing aresistor element, comprising: preparing a base substrate; forming afirst internal electrode and a second internal electrode on opposite endportions of the base substrate, respectively; forming a first resistancelayer electrically connected to the first internal electrode and formedof a thick film resistor; forming a second resistance layer electricallyconnected to the first resistance layer and to the second internalelectrode and formed of a thin film resistor; and forming a firstexternal electrode and a second external electrode on the first internalelectrode and the second internal electrode, respectively.
 10. Themethod of claim 9, wherein the first resistance layer and the secondresistance layer are formed to be bonded to each other on one surface ofthe base substrate.
 11. The method of claim 9, further comprisingforming a conductive via penetrating through the base substrate toconnect the first resistance layer and the second resistance layer toeach other, wherein the first resistance layer is formed on a firstsurface of the base substrate, and the second resistance layer is formedon a second surface of the base substrate opposing the first surface.12. The method of claim 9, wherein the thick film resistor contains aruthenium (Ru) oxide, and the thin film resistor contains at least oneof a nickel chromium (NiCr) alloy, a titanium nitride (TiN) alloy, and atantalum nitride (TaN) alloy.
 13. The method of claim 9, furthercomprising the steps of: measuring a resistance between the firstinternal electrode and the second internal electrode; and trimming thesecond resistance layer so that the measured resistance reaches a targetresistance for the resistor element.
 14. The method of claim 9, whereinthe first resistance layer is formed by a printing and firing process,and the second resistance layer is formed by a sputtering process.
 15. Aresistor element assembly comprising: a printed circuit board havingfirst and second electrode pads thereon; and a resistor element on theprinted circuit board, wherein the resistor element includes a firstterminal and a second terminal on opposite end portions of a basesubstrate, respectively, a first resistance layer electrically connectedto the first terminal and comprising a thick film resistor, and a secondresistance layer electrically connected to the first resistance layerand the second terminal and comprising a thin film resistor.
 16. Aresistor element comprising: a base substrate; a thin film resistor on afirst portion of an upper surface of the base substrate; a thick filmresistor on a second portion of the upper surface of the base substrateand in contact with the thin film resistor; a first terminal in contactwith the thin film resistor on at least a first side surface of the basesubstrate connected to the upper surface of the base substrate; and asecond terminal in contact with the thick film resistor on at least asecond side surface of the base substrate connected to the upper surfaceof the base substrate and opposing the first side surface.
 17. Theresistor element of claim 16, further comprising a first protectivelayer covering at least the thin film resistor; a second protectivelayer covering the first protective layer; and grooves in the firstprotective layer and the thin film resistor.
 18. The resistor element ofclaim 17, wherein the first protective layer includes glass and thesecond protective layer includes polymer.
 19. The resistor element ofclaim 16, wherein: the first terminal includes: a first internalelectrode on the upper surface of the base substrate, between the basesubstrate and the thin film resistor, and on the first side surface ofthe base substrate, and a first external electrode on the upper surfaceof a portion of the first internal electrode on the upper surface of thebase substrate and on a portion of the first internal electrode on thefirst side surface of the base substrate the second terminal includes: asecond internal electrode on the upper surface of the base substrate,between the base substrate and the thick film resistor, and on thesecond side surface of the base substrate, and a second externalelectrode on the upper surface of a portion of the second internalelectrode on the upper surface of the base substrate and on a portion ofthe second internal electrode on the second side surface of the basesubstrate.
 20. A resistor element comprising: a base substrate; a thinfilm resistor on a first surface of the base substrate; a thick filmresistor on a second surface of the base substrate opposing the firstsurface of the base substrate; and first and second terminals on firstand second side surfaces of the base substrate, opposing each other andeach connecting the first surface to the second surface, the first andsecond terminals electrically connected to the thin film resistor andthick film resistor, respectively, wherein the thin film resistor iselectrically connected to the thick film resistor.
 21. The resistorelement of claim 20, wherein the thin film resistor is electricallyconnected to the thick film resistor by a first conductive via withinthe base substrate.
 22. The resistor element of claim 20, wherein thethin film resistor is electrically connected to the thick film resistorby an electrode connected to the thin film resistor on the first surfaceof the base substrate, connected to the thick film resistor on thesecond surface of the base substrate, and within a groove on a thirdside surface of the base substrate connecting the first surface to thesecond surface and connecting the first side surface to the second sidesurface.
 23. The resistor element of claim 22, further comprising: asecond conductive via within the base substrate electrically connectingthe thick film resistor to a portion of the second terminal on the firstsurface of the base substrate, wherein the thick film resistor is not incontact with the second terminal on the second surface of the basesubstrate.